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february 2010 doc id 17079 rev 1 1/15 15 stf19nm50n STP19NM50N, stw19nm50n n-channel 500 v, 0.2 ? , 14 a mdmesh? ii power mosfet in to-220fp, to-220 and to-247 features 100% avalanche tested low input capacitances and gate charge low gate input resistance application switching applications description this second generation of mdmesh? technology, applies the benefits of the multiple drain process to stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product offers improved on-resistance, low gate charge, high dv/dt capability and excellent avalanche characteristics. figure 1. internal schematic diagram type v dss @ t jmax r ds(on) max i d stf19nm50n STP19NM50N stw19nm50n 550 v < 0.25 ? 14 a to-247 1 2 3 to-220 1 2 3 to-220fp 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging stf19nm50n 19nm50n to-220fp tu b e STP19NM50N to-220 stw19nm50n to-247 www.st.com
contents stf19nm50n, STP19NM50N, stw19nm50n 2/15 doc id 17079 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stf19nm50n, STP19NM50N, stw19nm50n electrical ratings doc id 17079 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-247 to-220fp v ds drain-source voltage (v gs = 0) 500 v v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 14 14 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 9 9 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 56 56 (1) a p tot total dissipation at t c = 25 c 110 30 w dv/dt (3) 3. i sd 14 a, di/dt 400 a/s, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature - 55 to 150 c t j max. operating junc tion temperature 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp r thj-case thermal resistance junction-case max 1.14 4.17 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repet itive or not-repetitive (pulse width limited by t j max) 7a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50 v) 208 mj
electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 4/15 doc id 17079 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 7 a 0.2 0.25 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 1000 72 3 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 400 v, v gs = 0 -104-pf c o(er) (2) 2. energy related is defined as a constant equivalent capacitance gi ving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -51-pf r g intrinsic gate resistance f = 1 mhz open drain - 4.4 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 14 a, v gs = 10 v (see figure 19 ) - 34 5 18 - nc nc nc
stf19nm50n, STP19NM50N, stw19nm50n electrical characteristics doc id 17079 rev 1 5/15 table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 250 v, i d = 7 a, r g = 4.7 ?, v gs = 10 v (see figure 20 ) - 12 16 61 17 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 14 56 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 14 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 60 v (see figure 23 ) - 296 3.5 23 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 14 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 23 ) - 346 4 24 ns nc a
electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 6/15 doc id 17079 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse ? s !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse ? s !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbyma x 2 $3on ? s ? s ms ms 4j ? # 4c ? # 3ingle pulse ? s !-v
stf19nm50n, STP19NM50N, stw19nm50n electrical characteristics doc id 17079 rev 1 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $3 6 ! 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ? * !-v
electrical characteristics stf19n m50n, STP19NM50N, stw19nm50n 8/15 doc id 17079 rev 1 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature 6 '3th 4 * ? # norm !-v 2 $3on 4 * ? # norm !-v 6 3$ ) 3$ ! 6 4 * ? # 4 * ? # 4 * ? # !-v "6 $33 4 * ? # norm !-v
stf19nm50n, STP19NM50N, stw19nm50n test circuits doc id 17079 rev 1 9/15 3 test circuits figure 18. switching times test circuit for resistive load figure 19. gate charge test circuit figure 20. test circuit for inductive load switching and diode recovery times figure 21. unclamped inductive load test circuit figure 22. unclamped inductive waveform figure 23. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf19nm50n, STP19NM50N, stw19nm50n 10/15 doc id 17079 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
stf19nm50n, STP19NM50N, stw19nm50n package mechanical data doc id 17079 rev 1 11/15 figure 24. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data stf19nm50n, STP19NM50N, stw19nm50n 12/15 doc id 17079 rev 1 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stf19nm50n, STP19NM50N, stw19nm50n package mechanical data doc id 17079 rev 1 13/15 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
revision history stf19nm50n, STP19NM50N, stw19nm50n 14/15 doc id 17079 rev 1 5 revision history table 10. document revision history date revision changes 09-feb-2010 1 first release
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